9 amps 500volts n-channel mosfet description the ET840 nchannel enhancement mode silicon gate power mosfet is designed for high voltage, high speed pow er switching applications such as switching regulators, switchin g converters, solenoid, motor drivers, relay drivers . features r ds(on) = 0.80@v gs = 10 v low gate charge ( typical 30nc) fast switching capability avalanche energy specified improved dv/dt capability symbol absolute maximum ratings (t c =25 ,unless otherwise specified) ratings parameter symbol to220 to220f units drainsource voltage v dss 500 v gatesource voltage v gss 30 v t c =25 9.0 9.0 a drain currenet continuous t c =100 i d 5.4 5.4 a drain current pulsed (note 1) i dp 36 36 a repetitive (note 1) e ar 13.9 mj avalanche energy single pulse (note 2) e as 360 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns t c =25 139 45.5 w total power dissipation derate above 25 p d 1.11 0.36 w/ junction temperature t j +150 storage temperature t stg 55~+150 drain current limited by maximum junction temperatu re. ET840 beijing estek electronics co.,ltd 1
ET840 thermal characteristics ratings parameter symbol to220 to220f units thermal resistance junctionambient r thja 62.5 thermal resistance, casetosink typ. r thcs 0.5 thermal resistance junctioncase r thjc 0.90 2.75 /w electrical characteristics t j =25 ,unless otherwise specified. 1. repetitive rating : pulse width limited by maxim um junction temperature 2. l = 8mh, i as =9.0 a, v dd = 50v, r g = 25 , starting tj = 25c 3. i sd 9.0 a, di/dt 200a/ s, v dd bv dss , starting tj = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature parameter symbol test conditions min typ max units off characteristics drainsource breakdown voltage bv dss v gs =0v,i d =250a 500 v v ds =500v,v gs =0v 1 a zero gate voltage drain current i dss v ds =400v,t c =125 10 a forward v gs =30v,v ds =0v 100 na gatebody leakage current reverse i gss v gs =30v,v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a 0.6 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drainsource onresistance r ds(on) v ds =10v,i d =4.5a 0.65 0.80 dynamic characteristics input capacitance c iss 870 pf output capacitance c oss 130 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1mh z 25 pf switching characteristics turnon delay time t d(on) 20 ns rise time t r 70 ns turnoff delay time t d(off) 90 ns fall time t f v dd =250v,i d =9.0a, r g =25 (note 4, 5) 60 ns total gate charge q g 30 nc gatesource charge q gs 4.0 nc gatedrain charge q gd v ds =400v, i d =9.0a , v gs =10v (note 4, 5) 15 nc drain-source diode characteristics drainsource diode forward voltage v sd v gs =0v,i sd =9.0a 1.4 v continuous drainsource current i sd 9.0 a pulsed drainsource current i sm 36.0 a reverse recovery time t rr 340 ns reverse recovery charge q rr i sd =9.0a, di sd /dt=100a/s (note 4) 3.0 c beijing estek electronics co.,ltd 2
typical characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 1. on - re gion characteristics figure 2. transfer characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics ET840 beijing estek electronics co.,ltd 3
typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-1. maximum safe operating area for to220 figure 10. maximum drain current vs case temperature figure 9-2. maximum safe operating area for to220f ET840 beijing estek electronics co.,ltd 4
typical characteristics (continued) figure 11 - 1. transient thermal response curve for t o220 figure 11 - 2 . transient thermal response curv e for t o220f ET840 beijing estek electronics co.,ltd 5
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